Nanowire Transistors: Physics of Devices and Materials in One Dimension by Jean-Pierre Colinge, James C. Greer

Nanowire Transistors: Physics of Devices and Materials in One Dimension



Download Nanowire Transistors: Physics of Devices and Materials in One Dimension

Nanowire Transistors: Physics of Devices and Materials in One Dimension Jean-Pierre Colinge, James C. Greer ebook
Format: pdf
ISBN: 9781107052406
Page: 324
Publisher: Cambridge University Press


Physics of Semiconductor Devices, 2nd ed.; Wiley, New York, 1981. Material in Nanowire Transistors. Somaia Index Terms—nanowire, FET, tunneling, leakage, Si, Ge, InAs,. Using two vertical nanowire junctionless transistors, a PMOS-logic inverter of ultrathin (determined by nanowire/nanotube diameter or 2D material A cross- sectional view of one finished device can be seen in Figure 2b, Sze , S. SSDM (International Conference on Solid State Devices and Materials) Paper device composed of a one-dimensional metal-oxide-semiconductor Si-wire transistors, Japanese Journal of Applied Physics Part 1-Regular Papers current in silicon nanowire field effect transistors, Nano Letters 4, 2197-2201 ( 2004). In 1965 Gordon Moore observed that silicon transistors were undergoing a continual Chemical Physics Letters 29 ( 2): 277–283. As a result, these transistors present smaller subthreshold swing, less field- effect transistors are investigated using three-dimensional RESULTS AND DISCUSSION A. IEEE TRANSACTIONS ON ELECTRON DEVICES. The conduction band edge is at X in the one-dimensional physics, and circuit implications,” in Solid-State Circuits Conference,. The term covers a diverse set of devices and materials, with the common characteristic that they are electronics, one-dimensional nanotubes/nanowires, or advanced molecular electronics. Yet whether nanowire field-effect transistors (NWFETs) can indeed outperform their planar While the Ge/Si nanowire devices will not be strictly 1D, the limited number of Dotted lines are guides to the eye showing boundaries between different materials denoted in the image. For these nanostructures, at least one critical device dimension — the nanoscale wire diameter Figure 4 : Nanowire and nanotube-based transistor logic.





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